Comprehensive Study of Stacked Nanosheet-Type Channel Based on Junctionless Gate-All-Around Thin-Film Transistors

All graphene-based thin film transistors on flexible plastic substrates.

High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GO dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm(2)), breakdown bias (1.5 × 10(6) V/cm), and good mechanical flexibility. Graphene-based TFTs showed a ho...

Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

Characterizing the electrical properties of raised S/D junctionless thin-film transistors with a dual-gate structure

This letter demonstrates a p-type raised source-and-drain (raised S/D) junctionless thin-film transistors (JL-TFTs) with a dual-gate structure. The raised S/D structure provides a high saturation current (>1 μA/μm). The subthreshold swing (SS) is 100 mV/decade and the drain-induced barrier lowering (DIBL) is 0.8 mV/V, and the I on/I off current ratio is over 10(8) A/A for L g = 1 μm. Using a th...

Study on the hydrogenated ZnO-based thin film transistors

P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology

P-type and N-type multi-gate vertical thin film transistors (vertical TFTs) have been fabricated, adopting the low-temperature (T ≤ 600°C) polycrystalline silicon (polysilicon) technology. Stacked heavily-doped polysilicon source and drain are electrically isolated by an insulating barrier. Multi-teeth configuration is defined by reactive ion etching leading to sidewalls formation on which undo...